DataSheet.es    


PDF MBRD20150CT Data sheet ( Hoja de datos )

Número de pieza MBRD20150CT
Descripción Schottky Rectifier ( Diode )
Fabricantes SANGDEST MICROELECTRONICS 
Logotipo SANGDEST MICROELECTRONICS Logotipo



Hay una vista previa y un enlace de descarga de MBRD20150CT (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! MBRD20150CT Hoja de datos, Descripción, Manual

SANGDEST
MICROELECTRONICS
MBRD20150CT
Technical Data
Data Sheet N0050, Rev. -
MBRD20150CT SCHOTTKY RECTIFIER
Applications:
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Green Products
Features:
150 TJ operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In Inches / mm
OPTION 1
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn

1 page




MBRD20150CT pdf
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0050, Rev. -
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg) *
Max. Reverse Current at DC
condition (per leg)
Max. Reverse Current (per
leg) *
Max. Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
VF1
VF2
IR1
IR2
CT
LS
dv/dt
Condition
@ 10A, Pulse, TJ = 25 °C
@ 10A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
MBRD20150CT
Green Products
Max.
1.0
0.95
1
7.0
200
8.0
10,000
Units
V
V
mA
mA
pF
nH
V/μs
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
Condition
-
-
DC operation
wt -
DPAK
Specification
-55 to +150
-55 to +150
4.5
Units
°C
°C
°C/W
0.39
g
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet MBRD20150CT.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
MBRD20150CTHigh Power Schottky Barrier RectifierSooner Power Semiconduction
Sooner Power Semiconduction
MBRD20150CTSchottky Rectifier ( Diode )SANGDEST MICROELECTRONICS
SANGDEST MICROELECTRONICS
MBRD20150CT20A SCHOTTKY BARRIER RECTIFIERDiodes
Diodes

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar