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Numéro de référence | B1236A | ||
Description | PNP Transistor - 2SB1236A | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Transistors
2SB1275 / 2SB1236A
Power Transistor (−160V , −1.5A)
2SB1275 / 2SB1236A
zFeatures
1) High breakdown voltage.(BVCEO = −160V)
2) Low collector output capacitance.
(Typ. 30pF at VCB = 10V)
3) High transition frequency.(fT = 50MHZ)
4) Complements the 2SD1918 / 2SD1857A.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector 2SB1275
power
dissipation 2SB1236A
Junction temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Limits
−160
−160
−5
−1.5
−3
1
10
1
150
Storage temperature
Tstg
−55∼+150
∗ 1 Single pulse Pw=100ms
∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Unit
V
V
V
A(DC)
A(Pulse)
∗1
W(Tc=25°C)
W ∗2
°C
°C
zExternal dimensions (Unit : mm)
2SB1275
ROHM : CPT3
EIAJ : SC-63
5.5 1.5
0.9
0.8Min.
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SB1236A
6.8
2.5
0.65Max.
ROHM : ATV
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1275
CPT3
P
TL
2500
2SB1236A
ATV
PQ
TV2
2500
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Symbol
BVCBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
2SB1275
2SB1236A
Transition frequency
Output capacitance
∗Measured using pulse current.
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−160
−160
−5
−
−
−
82
82
−
−
Typ.
−
−
−
−
−
−
−
−
50
30
Max.
−
−
−
−1
−1
−2
180
270
−
−
Unit
V
V
V
µA
µA
V
−
−
MHz
pF
Conditions
IC = −50µA
IC = −1mA
IE = −50µA
VCB = −120V
VEB = −4V
IC/IB = −1A/−0.1A
VCE = −5V , IC = −0.1A
VCE = −5V , IE = 0.1A , f = 30MHz
VCB = −10V , IE =0A , f = 1MHz
∗
Rev.A
1/3
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Pages | Pages 4 | ||
Télécharger | [ B1236A ] |
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