DataSheetWiki


DMA9640T fiches techniques PDF

Panasonic Semiconductor - Silicon PNP Epitaxial Transistor

Numéro de référence DMA9640T
Description Silicon PNP Epitaxial Transistor
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





1 Page

No Preview Available !





DMA9640T fiche technique
DMA9640T
Silicon PNP epitaxial planar type
For digital circuits
Unit: mm
Features
High forward current transfer ratio hFE
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: G6
Basic Part Number
Dual DRA2124X (Individual)
Packaging
DMA9640T0R Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Tr1
Tr2
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Overall
Operating ambient temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Topr
Tstg
–50
–50
–100
125
150
–40 to +85
–55 to +150
Unit
V
V
mA
mW
°C
°C
°C
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
Panasonic
JEITA
Code
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F3-B
SC-107C
SOT-666
(C1) (B2) (E2)
654
Tr1 R1 R2
R2 R1
Tr2
123
(E1) (B1) (C2)
Resistance value R1 22
R2 47
kΩ
kΩ
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
VCBO IC = –10 µA, IE = 0
–50
Collector-emitter voltage (Base open)
VCEO IC = –2 mA, IB = 0
–50
Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0
– 0.1
Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0
– 0.5
Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0
– 0.2
Forward current transfer ratio
hFE VCE = –10 V, IC = –5 mA
80 400
Collector-emitter saturation voltage
VCE(sat) IC = –10 mA, IB = – 0.5 mA
– 0.25
Input voltage (ON)
VI(on) VCE = – 0.2 V, IC = –5 mA
–2.1
Input voltage (OFF)
VI(off) VCE = –5 V, IC = –100 µA
– 0.6
Input resistance
R1
–30% 22 +30%
Resistance ratio
R1 / R2
0.37 0.47 0.57
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
V
V
µA
µA
mA
V
V
V
kΩ
Publication date: September 2013
Ver. EED
1

PagesPages 4
Télécharger [ DMA9640T ]


Fiche technique recommandé

No Description détaillée Fabricant
DMA9640T Silicon PNP Epitaxial Transistor Panasonic Semiconductor
Panasonic Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche