|
|
Numéro de référence | BD907 | ||
Description | NPN SILICON EPITAXIAL POWER TRANSISTOR | ||
Fabricant | PMC | ||
Logo | |||
1 Page
BD907
NPN SILICON EPITAXIAL POWER TRANSISTOR
… designed for power linear and switching applications.
… complementary to BD908.
MAXIMUM RATINGS
Characteristic
Collector Base Voltage (IE=0)
Collector Emitter Voltage (IB=0)
Emitter Base Voltage (IC=0)
Collector Current
Base Current
Total Power Dissipation Tc≤25°C
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC, IE
IB
Ptot
Tj
Tstg
Value
60
60
5
15
5
90
150
-65 ~ 150
ELECTRICAL CHARACTERISTICS (Tc = 25 °C)
Characteristic
Symbol
Test Condition
Collector Cutoff Current
ICBO
VCB=60V, IE=0
VCB=60V, IE=0, Tc=150°C
Collector Cutoff Current
ICEO
VCB=30V, IB=0
Emitter Cutoff Current
IEBO
VEB=5V, IC=0
DC Current Gain
hFE*
VCE=4V, IC=0.5A
VCE=4V, IC=5A
VCE=4V, IC=10A
Collector Emitter Saturation
VCE(sat)* IB=0.5A, IC=5A
Voltage
IB=2.5A, IC=10A
Base Emitter Saturation
VBE(sat)* IB=2.5A, IC=10A
Voltage
Base Emitter Voltage
VBE*
VCE=4V, IC=5A
Collector Emitter Sustaining VCE(sus)* IB=0, IC=100mA
Voltage
Transition Frequency
fT VCE=4V, IC=0.5A
*Pulsed: Pulse duration=300µs, duty cycle1.5%.
TO-220AB
Unit
V
V
V
A
A
W
°C
°C
1 : Base
2 : Collector (Heat Sink)
3 : Emitter
Weight: 1.9g
Unit in mm
Min.
-
-
-
-
40
15
5
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
500
5
1
1
250
150
-
1
3
2.5
Unit
µA
mA
mA
mA
-
-
-
V
V
V
- - 1.5 V
60 -
-V
3 - - MHz
NPN SILICON
EPITAXIAL POWER
TRANSISTOR
TO-220AB
PMC reserves the right to make changes without further notice to any products herein. PMC makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose, nor does PMC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential damages. The examples of applied circuits are provided as reference to the
reader therefore we shall not undertake any responsibility for the exercise of rights by third parties.
PMC Components Pte Ltd. , Singapore, 2000
|
|||
Pages | Pages 1 | ||
Télécharger | [ BD907 ] |
No | Description détaillée | Fabricant |
BD900 | PNP SILICON POWER DARLINGTONS | TRSYS |
BD900 | PNP SILICON POWER DARLINGTONS | Power Innovations Limited |
BD900 | (BD900 / BD902) SILICON POWER TRANSISTOR | SavantIC |
BD900 | (BD900 / BD902) Silicon PNP Power Transistors | Inchange Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |