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PDF 51N25 Data sheet ( Hoja de datos )
| Número de pieza | 51N25 | |
| Descripción | FDP51N25 | |
| Fabricantes | Fairchild Semiconductor | |
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FDP51N25 / FDPF51N25
N-Channel UniFETTM MOSFET
250 V, 51 A, 60 mΩ
Features
• RDS(on) = 48 mΩ (Typ.) @ VGS = 10 V, ID = 25.5 A
• Low Gate Charge (Typ. 55 nC)
• Low Crss (Typ. 63 pF)
Applications
• PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
August 2014
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
DD
GDS
TO-220 GDS
G
S
TO-220F
G
TO-220F
Y-formed
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
S
Symbol
Parameter
FDP51N25
G
TO-220F
LG-formed
S
FDPF51N25
FDPF51N25YDTU
FDPF51N25RDTU
Unit
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
250
51 51*
30 30*
204 204*
± 30
1111
51
32
4.5
V
A
A
A
V
mJ
A
mJ
V/ns
PD
TJ, TSTG
TL
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
320 38
3.7 0.3
-55 to +150
300
W
W/°C
°C
°C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDP51N25
0.39
62.5
FDPF51N25
FDPF51N25YDTU
FDPF51N25RDTU
3.3
62.5
Unit
°C/W
°C/W
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP51N25
D=0.5
10-1 0.2
0.1
0.05
0.02
10-2 0.01
single pulse
PDM
t1
t2
* Notes :
1. ZθJC(t) = 0.39 0C/W Max.
2. Duty Factor, D=t /t
12
3. TJM - TC = PDM * ZθJC(t)
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF51N25 / FDPF51N25YDTU
D=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
single pulse
PDM
t1
t2
* Notes :
1. ZθJC(t) = 3.3 0C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-2
10-5
10-4 10-3 10-2 10-1 100
t1, Square Wave Pulse Duration [sec]
101
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. C2
5
www.fairchildsemi.com
5 Page 
A
3.40
3.20
B
10.36
9.96
7.00
3.28
3.08
SEE NOTE "F"
6.88
6.48
B
2.74
2.34
0.70
SEE NOTE "F"
16.00
15.60
1
2.14
10.05
9.45
2.54
1 X 45°
B
16.07
15.67
(3.23) B
3
1.47
1.24
0.90
0.70
0.50 M
A
2.96
2.56
30°
0.45
0.25
2.54
B
4.90
4.50
B
0.60
0.45
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV3
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet 51N25.PDF ] | |
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