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B0520W fiches techniques PDF

F.E.C. Semiconductor - 0.5A Surface Mount Schottky Rectifier

Numéro de référence B0520W
Description 0.5A Surface Mount Schottky Rectifier
Fabricant F.E.C. Semiconductor 
Logo F.E.C. Semiconductor 





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B0520W fiche technique
F.E.C. Semiconductor
II. Schottky Rectifier
0.5A Surface Mount Schottky Rectifier
B0520W~B0540W
(Package: SOD-123)
FEATURES
Low forward voltage drop
Guard ring construction for transient protection
High conductance
MECHANICAL DATA
Case : Molded plastic body
Terminals : Plated leads solderable per
MIL-STD-750, Method 2026
Polarity : Polarity symbols marked on case
Marking : B0520W : SD
B0530W : SE
B0540W : SF
1.80(.071)
1.40(.055)
3.86(0.152)
3.56(0.145)
2.84(0.112)
2.54(0.100)
.15(.006)
MAX
.71(0.028)
.50(0.020)
1.35(.053)
.94(.037)
.25(.010)
MIN
Case: SOD-123
Dimensions in millimetres (inches)
Ratings & Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20%.
Characteristic
Symbol B0520W B0530W
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Voltage rate of change
Minimum reverse breakdown voltage
Forward voltage
Ta=25
Reverse current
Ta=25
Average rectified output current
Peak forward surge current
Power dissipation
Thermal resistance junction to ambient
IR=250µA
IR=130µA
IR=20µA
IF=0.1A
IF=0.5A
IF=1.0A
VR=10V
VR=15V
VR=20V
VR=30V
VR=40V
VRRM
VRWM
VR
VR(RMS)
dv/dt
VBR
VF1
VF2
VF3
IR1
IR2
IR3
IR4
IR5
IO
IFSM
PD
Rth-JA
20
14
20
-
-
0.300
0.385
-
75
-
250
-
-
30
21
1000
-
30
-
0.375
0.430
-
-
20
-
130
-
500
5.5
410
244
Storage temperature
Capacitance between terminals VR=1V, f=1.0MHz
Note:
Maximum ratings and electrical characteristics, single diode @ Ta = 25
Tstg
CT
-65 to +150
170 170
B0540W
40
28
-
-
40
-
0.510
0.620
-
-
10
-
20
170
Unit
Volts
Volts
V/µs
Volts
Volts
µA
mA
Amps
mW
/W
PF
1

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