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Numéro de référence | Si3456BDV | ||
Description | N-Channel 30-V (D-S) MOSFET | ||
Fabricant | Vishay | ||
Logo | |||
1 Page
N-Channel 30-V (D-S) MOSFET
Si3456BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.035 at VGS = 10 V
0.052 at VGS = 4.5 V
ID (A)
6.0
4.9
FEATURES
• Halogen free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
Ordering Information: Si3456BDV-T1-E3 (Lead (Pb)-free)
Si3456BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code:
6Bxxx
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
6.0 4.5
4.8 3.6
Pulsed Drain Current
IDM ± 30
Continuous Source Current (Diode Conduction)a
IS 1.7 0.9
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.0
1.3
1.1
0.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t≤5s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
55
92
28
Maximum
62.5
110
40
Unit
°C/W
Document Number: 72544
S09-0530-Rev. D, 06-Apr-09
www.vishay.com
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Pages | Pages 10 | ||
Télécharger | [ Si3456BDV ] |
No | Description détaillée | Fabricant |
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