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Numéro de référence | Si5484DU | ||
Description | N-Channel 20-V (D-S) MOSFET | ||
Fabricant | Vishay | ||
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1 Page
N-Channel 20-V (D-S) MOSFET
Si5484DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.016 at VGS = 4.5 V
20
0.021 at VGS = 2.5 V
ID (A)a
12
12
Qg (Typ.)
16.5 nC
PowerPAK ChipFET Single
1
2
D3
DD
4
8D
7D
6S
D
G
S
5
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
RoHS
COMPLIANT
APPLICATIONS
• Load Switch, PA Switch, and for Portable Applications
D
Marking Code
AF XXX
Lot Traceability
and Date Code
Part # Code
G
Bottom View
Ordering Information: Si5484DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
20
± 12
12a
12a
11.4b, c
9.1b, c
40
12a
2.6b, c
31
20
3.1b, c
2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
34
3
40 °C/W
4
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73589
S-81448-Rev. B, 23-Jun-08
www.vishay.com
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Pages | Pages 7 | ||
Télécharger | [ Si5484DU ] |
No | Description détaillée | Fabricant |
Si5484DU | N-Channel 20-V (D-S) MOSFET | Vishay |
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