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Vishay - N-Channel 30-V (D-S) MOSFET

Numéro de référence Si4322DY
Description N-Channel 30-V (D-S) MOSFET
Fabricant Vishay 
Logo Vishay 





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Si4322DY fiche technique
Si4322DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0085 at VGS = 10 V
0.0125 at VGS = 4.5 V
ID (A)a
18
15
Qg (Typ.)
11.7 nC
SCHOTTKY AND BODY DIODE PRODUCT
SUMMARY
VDS (V)
30
VSD (V)
Diode Forward Voltage
0.4 at 2 A
IS (A)
5a
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4322DY-T1-E3 (Lead (Pb)-free)
Si4322DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFET
100 % Rg Tested
APPLICATIONS
• Synchronous Buck-Low Side
- Notebook
- Server
- Workstation
Synchronous Rectifier-POL
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
30
± 20
18
15
14b, c
11b, c
50
5
2.8b, c
5.4
3.4
3.1b, c
2.0b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typ.
34
17
Max.
40
23
Unit
°C/W
Document Number: 73860
S09-0226-Rev. B, 09-Feb-09
www.vishay.com
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