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Número de pieza | Si4398DY | |
Descripción | Fast Switching MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de Si4398DY (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Si4398DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
0.0028 at VGS = 10 V
0.0040 at VGS = 4.5 V
ID (A)
25
22
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Extremely Low Qgd for Switching Losses
• Ultra-Low On-Resistance
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Rectifier in Low Power DC/DC Converters
• POL
• OR-ing
D
G
Ordering Information: Si4398DY-T1-E3 (Lead (Pb)-free)
Si4398DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
L = 0.1 mH
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
20
± 20
25 19
20 13
70
2.9 1.3
40
80
3.5 1.6
2.2 1.0
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1” x 1” FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
29
67
13
Maximum
35
80
16
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 73018
S11-0209-Rev. C, 14-Feb-11
www.vishay.com
1
1 page TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
Si4398DY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73018.
Document Number: 73018
S11-0209-Rev. C, 14-Feb-11
www.vishay.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet Si4398DY.PDF ] |
Número de pieza | Descripción | Fabricantes |
Si4398DY | Fast Switching MOSFET | Vishay |
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