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PDF Si4845DY Data sheet ( Hoja de datos )
| Número de pieza | Si4845DY | |
| Descripción | P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si4845DY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
0.210 at VGS = - 4.5 V
0.345 at VGS = - 2.5 V
ID (A)a
- 2.7
- 2.1
Qg (Typ.)
2.9
SCHOTTKY PRODUCT SUMMARY
VKA (V)
VF (V)
Diode Forward Voltage
20 0.50 V at 1.0 A
IF (A)
2.4
SO-8
A1
A2
S3
G4
8K
7K
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT® Plus Integrated Schottky
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Asynchronous dc-to-dc Buck
SK
G
Top View
Ordering Information:Si4845DY-T1-E3 (Lead (Pb)-free)
Si4845DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
VDS
Reverse Voltage (Schottky)
VKA
Gate-Source Voltage (MOSFET)
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (MOSFET)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
TC = 25 °C
TA = 25 °C
IS
IF
Pulsed Foward Current (Schottky)
IFM
TC = 25 °C
Maximum Power Dissipation (Schottky)
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 20
- 20
± 12
- 2.7
- 2.1
- 2.1b, c
- 1.7b, c
-7
- 2.4
- 1.9b, c
1b
-7
2.75
1.75
1.75b, c
1.1b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET and Schottky)
Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 73415
S09-2109-Rev. C, 12-Oct-09
Symbol
RthJA
RthJF
Typ.
60
35
Max.
71.5
45
Unit
°C/W
www.vishay.com
1
1 page  
Si4845DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
3.0
2.5
2.0
1.5
1.0
0.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Current Derating*
1.25
150
1.00
0.75
0.50
0.25
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0.00
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73415
S09-2109-Rev. C, 12-Oct-09
www.vishay.com
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| PDF Descargar | [ Datasheet Si4845DY.PDF ] | |
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