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PDF Si5481DU Data sheet ( Hoja de datos )
| Número de pieza | Si5481DU | |
| Descripción | P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
P-Channel 20-V (D-S) MOSFET
Si5481DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = - 4.5 V
- 20 0.029 at VGS = - 2.5 V
0.041 at VGS = - 1.8 V
ID (A)
- 12a
- 12a
- 12a
PowerPAK ChipFET Single
1
2
D3
DD
4
8D
7D
6S
D
G
S
5
Qg (Typ.)
20 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• New thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
RoHS
COMPLIANT
APPLICATIONS
• Load Switch, Battery Switch, PA Switch and Charger
Switch for Portable Devices S
Marking Code
BC XXX
Lot Traceability
and Date Code
Part #
Code
G
Bottom View
Ordering Information: Si5481DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
D
P-Channel MOSFET
Limit
- 20
±8
- 12a
- 12a
- 9.7b, c
- 7.8b, c
- 20
- 14.8
- 2.6b, c
17.8
11.4
3.1b, c
2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
Symbol
RthJA
RthJC
Typical
30
5.5
Maximum
40
7
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 90 °C/W.
Document Number: 73777
S-81448-Rev. C, 23-Jun-08
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
28 18
24
20
16
Package Limited
12
8
4
16
14
12
10
8
6
4
2
0
0 25 50 75 100 125 150
0
25
TC - Case Temperature (°C)
Current Derating*
Si5481DU
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73777
S-81448-Rev. C, 23-Jun-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet Si5481DU.PDF ] | |
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