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QM2427S fiches techniques PDF

UBIQ - P-Ch 20V Fast Switching MOSFETs

Numéro de référence QM2427S
Description P-Ch 20V Fast Switching MOSFETs
Fabricant UBIQ 
Logo UBIQ 





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QM2427S fiche technique
QM2427S
P-Ch 20V Fast Switching MOSFETs
General Description
The QM2427S is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM2427S meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z Green Device Available
Product Summery
BVDSS
-20V
RDSON
9m
ID
-10.7A
Applications
z Battery Switch
z Networking DC-DC Power System
z Load Switch
SOP8 Pin Configuration
D D DD
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
PD@TA=70
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ -4.5V1
Continuous Drain Current, VGS @ -4.5V1
Pulsed Drain Current2
Total Power Dissipation3
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
S SS G
Rating
10s Steady State
-20
±8
-14 -10.7
-11.2
-8.6
-60
2.5 1.5
1.6 0.94
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t 10s)
Thermal Resistance Junction-Case1
1
Typ.
---
---
---
Max.
85
50
24
Unit
/W
/W
/W
Rev A.02 D030111

PagesPages 4
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