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QM3009K fiches techniques PDF

UBIQ - P-Ch 30V Fast Switching MOSFETs

Numéro de référence QM3009K
Description P-Ch 30V Fast Switching MOSFETs
Fabricant UBIQ 
Logo UBIQ 





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QM3009K fiche technique
QM3009K
P-Ch 30V Fast Switching MOSFETs
General Description
The QM3009K is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The QM3009K meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
-30V
RDSON
135m
ID
-2.3A
Applications
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
SOT23 Pin Configuration
D
GS
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
PD@TA=70
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Pulsed Drain Current2
Total Power Dissipation3
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Rating
10s Steady State
-30
±20
-2.6 -2.3
-2.1 -1.8
-4.6
1.32 1
0.84 0.64
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t 10s)
Thermal Resistance Junction-Case1
1
Typ.
---
---
---
Max.
125
95
80
Unit
/W
/W
/W
Rev A.01 D021511

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