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QM6001D fiches techniques PDF

UBIQ - P-Ch 60V Fast Switching MOSFETs

Numéro de référence QM6001D
Description P-Ch 60V Fast Switching MOSFETs
Fabricant UBIQ 
Logo UBIQ 





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QM6001D fiche technique
QM6001D
P-Ch 60V Fast Switching MOSFETs
General Description
The QM6001D is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM6001D meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
-60V
RDSON
110m
ID
-11.5A
Applications
z Power management in half bridge and inverters
z DC-DC Converter
z LCD / LED Backlight Application
TO252 Pin Configuration
D
Absolute Maximum Ratings
S
G
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
-60
±20
-11.5
-8.9
-23
29
-20
16
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
62
5
Unit
/W
/W
Rev A.01 D100809
1

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