|
|
PDF APTM50DAM35TG Data sheet ( Hoja de datos )
| Número de pieza | APTM50DAM35TG | |
| Descripción | Boost Chopper MOSFET Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de APTM50DAM35TG (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
APTM50DAM35TG
Boost Chopper
MOSFET Power Module
VDSS = 500V
RDSon = 35mΩ typ @ Tj = 25°C
ID = 99A @ Tc = 25°C
VBUS SENSE
V BUS
NT C2
CR1
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Q2
G2
S2
0/VBU S
OUT
NT C1
VB US
VB US
SE NSE
G2
S2
0/VBUS
S2
G2
OUT
OUT
NTC2
NTC1
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
500
99
74
396
±30
39
781
51
50
3000
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
1 page  
Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
1000
100
Crss
10
0 10 20 30 40
VDS, Drain to Source Voltage (V)
50
APTM50DAM35TG
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID=49.5A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100
limited by RDSon
100 us
1 ms
10
1
1
Single pulse
TJ=150°C
TC=25°C
10 ms
100 ms
10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
ID=99A
TJ=25°C
10
VDS=100V
VDS=250V
8 VDS=400V
6
4
2
0
0 50 100 150 200 250 300 350
Gate Charge (nC)
www.microsemi.com
5–6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTM50DAM35TG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| APTM50DAM35T | MOSFET Power Module |  Advanced Power Technology |
| APTM50DAM35TG | Boost Chopper MOSFET Power Module | Microsemi |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |