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Numéro de référence | SS8050 | ||
Description | NPN Transistor | ||
Fabricant | KOO CHIN | ||
Logo | |||
1 Page
SS8050 TRANSISTOR (NPN)
SOT-23
FEATURES
Complimentary to SS8550
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: Y1
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
25
5
1.5
0.3
150
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Units
V
V
V
A
W
℃
℃
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC= 100μA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC= 0.1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
Collector cut-off current
ICBO
VCB=40V, IE=0
Collector cut-off current
ICEO
VCB=20V, IE=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=1V, IC= 100mA
VCE=1V, IC= 800mA
Collector-emitter saturation voltage
VCE(sat) IC=800mA, IB= 80mA
Base-emitter saturation voltage
VBE(sat)
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
Range
L
120-200
fT
IC=800mA, IB= 80mA
VCE=10V, IC= 50mA
f=30MHz
H
200-350
MIN TYP MAX UNIT
40 V
25 V
5V
0.1 μA
0.1 μA
0.1 μA
120 400
40
0.5 V
1.2 V
100 MHz
J
300-400
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Pages | Pages 2 | ||
Télécharger | [ SS8050 ] |
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