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Vishay - P-Channel 20-V (D-S) MOSFET

Numéro de référence Si3879DV
Description P-Channel 20-V (D-S) MOSFET
Fabricant Vishay 
Logo Vishay 





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Si3879DV fiche technique
Si3879DV
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
0.070 at VGS = - 5.0 V
0.105 at VGS = - 2.5 V
ID (A)a
- 5.0
- 4.2
Qg (Typ.)
4.5 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
20 0.45 at 1 A
IF (A)a
2
TSOP-6
Top View
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT® Plus Schottky Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• HDD
- DC-DC Converter
• Asynchronous Rectification
S
A
A1
6 D/K
3 mm S
G
25
34
2.85 mm
D/K
D/K
Marking Code
IG XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3879DV-T1-E3 (Lead (Pb)-free)
Si3879DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
VDS
Reverse Voltage (Schottky)
VKA
Gate-Source Voltage (MOSFET)
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (MOSFET)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
TC = 25 °C
TA = 25 °C
IS
IF
Pulsed Forward Current (Schottky)
IFM
TC = 25 °C
Maximum Power Dissipation (MOSFET)
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
PD
Maximum Power Dissipation (Schottky)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 20
20
± 12
- 5.0
- 4.0
- 4.0b, c
- 3.0b, c
- 20
- 2.7
- 1.6b, c
2b
5
3.3
2.1
2.0b, c
1.2b, c
1.9
1.2
1.3b, c
0.9b, c
- 55 to 150
K
Unit
V
A
W
°C
Document Number: 74958
S09-2275-Rev. B, 02-Nov-09
www.vishay.com
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