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PDF Si5479DU Data sheet ( Hoja de datos )
| Número de pieza | Si5479DU | |
| Descripción | P-Channel 12-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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P-Channel 12-V (D-S) MOSFET
Si5479DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.021 at VGS = - 4.5 V
- 12 0.028 at VGS = - 2.5 V
0.039 at VGS = - 1.8 V
ID (A)a
- 16.9
- 16
- 16
Qg (Typ.)
21 nC
PowerPAK ChipFET Single
1
2
D3
D
8D
D
D
4
7D
G
6S
5
S
Marking Code
BB XXX
Lot Traceability
and Date Code
Part # Code
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
• ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
RoHS
COMPLIANT
APPLICATIONS
• Load Switch, PA Switch, and Battery Switch for Portable
Applications
S
G
Bottom View
Ordering Information: Si5479DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 12
±8
- 16a
- 16a
- 10.3b, c
- 8.3b, c
- 20
- 14.8
- 2.6b, c
17.8
11.4
3.1b, c
2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
30
5.5
40
°C/W
7
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73368
S-81448-Rev. B, 23-Jun-08
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 20
25
20
Package Limited
15
10
5
16
12
8
4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
Si5479DU
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73368
S-81448-Rev. B, 23-Jun-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet Si5479DU.PDF ] | |
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