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PDF Si7156DP Data sheet ( Hoja de datos )
| Número de pieza | Si7156DP | |
| Descripción | N-Channel 40-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 40-V (D-S) MOSFET
Si7156DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
40
RDS(on) (Ω)
0.0035 at VGS = 10 V
0.0047 at VGS = 4.5 V
PowerPAK® SO-8
ID (A)a
50
50
Qg (Typ.)
45 nC
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % Avalanche Tested
APPLICATIONS
• Synchronous Rectification
• Secondary Side DC/DC
D
G
Bottom View
Ordering Information: Si7156DP-T1-E3 (Lead (Pb)-free)
Si7156DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
S
N-Channel MOSFET
Limit
40
± 20
50a
50a
29b, c
23b, c
70
50a
4.9b, c
40
80
83
53
5.4b, c
3.4b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
18
1.0
23
°C/W
1.5
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 69639
S09-0222-Rev. B, 09-Feb-09
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
155
Si7156DP
Vishay Siliconix
124
93
62 Package Limited
31
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
100 2.5
80 2.0
60 1.5
40 1.0
20 0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0
0 25 50 75 100 125 150
TA - Ambient Temperature (A)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69639
S09-0222-Rev. B, 09-Feb-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet Si7156DP.PDF ] | |
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