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SUD50N03-16P fiches techniques PDF

Vishay - N-Channel 30-V (D-S) MOSFET

Numéro de référence SUD50N03-16P
Description N-Channel 30-V (D-S) MOSFET
Fabricant Vishay 
Logo Vishay 





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SUD50N03-16P fiche technique
New Product
N-Channel 30-V (D-S) MOSFET
SUD50N03-16P
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.016 @ VGS = 10 V
30
0.024 @ VGS = 4.5 V
TO-252
ID (A)a
15
12
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized
D 100% Rg Tested
APPLICATIONS
D High-Side DC/DC
Desktop
Server
D D DDR DC/DC Converter
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N03-16P—E3 (Lead Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TA = 25_C
TA = 100_C
L = 0.1 mH
TC = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
"20
37
15
10.6
40
5
25
31.25
40.8
6.5a
55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 72634
S-40466—Rev. A, 15-Mar-04
t v 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
18
40
3.0
Maximum
23
50
3.7
Unit
_C/W
www.vishay.com
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