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PDF SUD50N10-34P Data sheet ( Hoja de datos )
| Número de pieza | SUD50N10-34P | |
| Descripción | N-Channel 100-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SUD50N10-34P
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
100 0.034 at VGS = 10 V
0.040 at VGS = 6.0 V
ID (A)a
20
20
Qg (Typ)
24 nC
FEATURES
• TrenchFET® Power MOSFET
• 100 % UIS Tested
APPLICATIONS
• LCD TV Inverter
• LCD Backlight
TO-252
D
RoHS
COMPLIANT
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUD50N10-34P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
100
± 20
20a
20a
5.9b
4.7b
50
20a
2.0b
25
31
56
36
2.5b
1.6b
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Steady State
Steady State
Document Number: 74802
S-72068-Rev. A, 08-Oct-07
Symbol
RthJA
RthJC
Typical
38
1.6
Maximum
50
2.2
Unit
°C/W
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 7
rDS(on) Limited*
10
100 µs
6
1
0.1
TC = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
4
3
1
SUD50N10-34P
Vishay Siliconix
0.01
0.01
0.1 1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Case
32
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Current Derating**, Junction-to-Ambient
70
26
Package Limited
19
56
42
13 28
6 14
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating**, Junction-to-Case
3.0
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating**, Junction-to-Case
2.4
1.8
1.2
0.6
0.0
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating**, Junction-to-Ambient
Document Number: 74802
S-72068-Rev. A, 08-Oct-07
** The power dissipation PD is based on TJ(max) = 175 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SUD50N10-34P.PDF ] | |
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