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PDF SUD50P04-40P Data sheet ( Hoja de datos )
| Número de pieza | SUD50P04-40P | |
| Descripción | P-Channel 40-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
P-Channel 40-V (D-S) MOSFET
SUD50P04-40P
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 40 0.040 at VGS = - 10 V
0.050 at VGS = - 4.5 V
ID (A)a
-8
-8
Qg (Typ.)
17 nC
TO-252
FEATURES
• TrenchFET® Power MOSFET
• 100 % UIS Tested
APPLICATIONS
• Backlight Inverter for LCD Display
• Full Bridge DC/DC Converter
S
G
RoHS
COMPLIANT
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUD50P04-40P-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
TC = 25 °C
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
IS
IAS
EAS
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
- 40
± 20
- 8a
- 8a
- 6b
- 4.8b
- 30
- 8a
- 2.0b
15
11.25
24
15.3
2.4b
1.5b
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Steady State
Steady State
Document Number: 69731
S-80109-Rev. B, 21-Jan-08
Symbol
RthJA
RthJC
Typical
43
4.3
Maximum
52
5.2
Unit
°C/W
www.vishay.com
1
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 7
SUD50P04-40P
Vishay Siliconix
Limited by rDS(on)*
10
1
100 µs
1 ms
10 ms
100 ms
DC
0.1
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Case
22
6
4
3
1
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Current Derating*, Junction-to-Ambient
3.5
18 2.8
13
Package Limited
9
2.1
1.4
4 0.7
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*, Junction-to-Case
35
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature (°C)
Power Derating*, Junction-to-Ambient
28
21
14
7
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Power Derating*, Junction-to-Case
Document Number: 69731
S-80109-Rev. B, 21-Jan-08
* The power dissipation PD is based on TJ(max) = 175 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
www.vishay.com
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SUD50P04-40P.PDF ] | |
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