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SUM90N08-7m6P fiches techniques PDF

Vishay - N-Channel 75-V (D-S) MOSFET

Numéro de référence SUM90N08-7m6P
Description N-Channel 75-V (D-S) MOSFET
Fabricant Vishay 
Logo Vishay 





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SUM90N08-7m6P fiche technique
SUM90N08-7m6P
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
RDS(on) (Ω)
75 0.0076 at VGS = 10 V
ID (A)
90d
Qg (Typ.)
58
FEATURES
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• 100 % Rg and UIS Tested
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
Industrial
TO-263
D
RoHS
COMPLIANT
G DS
Top View
Ordering Information: SUM90N08-7m6P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
75
± 20
90d
81
200
50
125
150b
3.75
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69578
S-80799-Rev. B, 14-Apr-08
Symbol
RthJA
RthJC
Limit
40
1
Unit
°C/W
www.vishay.com
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