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IXFT13N100 fiches techniques PDF

IXYS - Power MOSFETs

Numéro de référence IXFT13N100
Description Power MOSFETs
Fabricant IXYS 
Logo IXYS 





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IXFT13N100 fiche technique
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
IXFT10N100
IXFT12N100
IXFT13N100
V
DSS
I
D25
1000 V 10 A
1000 V 12 A
1000 V 12.5 A
trr £ 250 ns
R
DS(on)
1.20 W
1.05 W
0.90 W
Preliminary data sheet
Symbol
V
DSS
VDGR
V
GS
VGSM
ID25
IDM
IAR
EAR
dv/dt
P
D
TJ
T
JM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
10N100
12N100
13N100
10N100
12N100
13N100
10N100
12N100
13N100
1000
1000
±20
±30
10
12
12.5
40
48
50
10
12
12.5
30
5
V
V
V
V
A
A
A
A
A
A
A
A
A
mJ
V/ns
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
TO-268 = 6 g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
10N100
12N100
13N100
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1000
2.0
V
4.5 V
±100 nA
250 mA
1 mA
1.20 W
1.05 W
0.90 W
TO-268 Case Style
G
S
(TAB)
G = Gate,
S = Source,
TAB = Drain
Features
• International standard package
• Low R HDMOSTM process
DS (on)
• Rugged polysilicon gate cell
structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Surface mountable, high power
package
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98509A (4/99)
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