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PDF PSMN008-75P Data sheet ( Hoja de datos )
| Número de pieza | PSMN008-75P | |
| Descripción | N-channel TrenchMOS SiliconMAX standard level FET | |
| Fabricantes | NXP Semiconductors | |
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PSMN008-75P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 — 10 December 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
Rated for avalanche ruggedness
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC convertors
Uninterruptible power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 75 A;
VDS = 60 V; Tj = 25 °C;
see Figure 11
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 25 A;
on-state resistance Tj = 25 °C; see Figure 9 and 10
Min Typ Max Unit
- - 75 V
- - 75 A
- - 230 W
- 50 - nC
- 6.5 8.5 mΩ
1 page  
NXP Semiconductors
PSMN008-75P
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS gate-source charge
QGD gate-drain charge
Ciss input capacitance
Coss
output capacitance
Crss reverse transfer
capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS= VGS; Tj = -55 °C;
see Figure 8
ID = 1 mA; VDS= VGS; Tj = 175 °C;
see Figure 8
ID = 1 mA; VDS= VGS; Tj = 25 °C;
see Figure 8
VDS = 75 V; VGS = 0 V; Tj = 25 °C
VDS = 75 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 9 and 10
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 9 and 10
ID = 75 A; VDS = 60 V; VGS = 10 V;
Tj = 25 °C; see Figure 11
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
VDS = 38 V; RL = 1.5 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 13
IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
75 90 -
V
- - 4.4 V
1- - V
234V
-
0.05 10
µA
- - 500 µA
- 4 100 nA
- 4 100 nA
- - 20 mΩ
- 6.5 8.5 mΩ
- 122.8 - nC
- 21 - nC
- 50 - nC
- 5260 - pF
- 525 - pF
- 420 - pF
- 18 - ns
- 55 - ns
- 88 - ns
- 80 - ns
- 0.84 1.2 V
- 70 - ns
- 100 - nC
PSMN008-75P_4
Product data sheet
Rev. 04 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
PSMN008-75P
N-channel TrenchMOS SiliconMAX standard level FET
9. Legal information
9.1 Data sheet status
Document status[1][2]
Objective [short] data sheet
Preliminary [short] data sheet
Product [short] data sheet
Product status[3]
Development
Qualification
Production
Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
9.2 Definitions
Draft— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet— A short data sheet is an extract from a full data sheet with
the same product type number(s) and title. A short data sheet is intended for
quick reference only and should not be relied upon to contain detailed and full
information. For detailed and full information see the relevant full data sheet,
which is available on request via the local NXP Semiconductors sales office.
In case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
9.3 Disclaimers
General— Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes— NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use— NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications— Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale— NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
athttp://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS— is a trademark of NXP B.V.
10. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:[email protected]
PSMN008-75P_4
Product data sheet
Rev. 04 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
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