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PDF PH6030L Data sheet ( Hoja de datos )
| Número de pieza | PH6030L | |
| Descripción | N-channel TrenchMOS logic level FET | |
| Fabricantes | NXP Semiconductors | |
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PH6030L
N-channel TrenchMOS logic level FET
Rev. 01 — 29 July 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features and benefits
Lead-free package
Logic level compatibile
Optimized for use in DC-to-DC
converters
Very low switching and conduction
losses
1.3 Applications
DC-to-DC convertors
Notebook computers
Switched-mode power supplies
Voltage regulators
1.4 Quick reference data
Table 1. Quick reference
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 150 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1; see Figure 3
Dynamic characteristics
QGD
gate-drain charge VGS = 4.5 V; ID = 25 A;
VDS = 12 V; see Figure 11;
see Figure 12
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 9; see
Figure 10
Min Typ Max Unit
- - 30 V
- - 76.7 A
- 3.1 - nC
-
4.7 6
mΩ
1 page  
NXP Semiconductors
PH6030L
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 7
ID = 1 mA; VDS = VGS; Tj = 150 °C; see
Figure 7
ID = 1 mA; VDS = VGS; Tj = 25 °C; see
Figure 7; see Figure 8
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 150 °C; see
Figure 9
VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see
Figure 9; see Figure 10
VGS = 10 V; ID = 25 A; Tj = 25 °C; see
Figure 9; see Figure 10
RG gate resistance
Dynamic characteristics
f = 1 MHz
QG(tot)
total gate charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V; see
Figure 11; see Figure 12
ID = 0 A; VDS = 0 V; VGS = 4.5 V; see
Figure 11
QGS
QGD
QGS1
gate-source charge
gate-drain charge
pre-threshold
gate-source charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V; see
Figure 12; see Figure 12
QGS2
post-threshold
gate-source charge
VGS(pl)
gate-source plateau ID = 25 A; VDS = 12 V; see Figure 11; see
voltage
Figure 12
Ciss
Coss
Crss
input capacitance
output capacitance
reverse transfer
capacitance
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 13
VDS = 0 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 13
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 13
Min Typ Max Unit
27 -
30 -
--
-V
-V
2.6 V
0.8 -
-
V
1.3 1.7
2.15 V
- - 1 µA
--
100 µA
--
100 nA
--
100 nA
- 8.5 10.6 mΩ
-
7.3 9.7
mΩ
- 4.7 6
mΩ
- 1.75 -
Ω
- 15.2 -
- 14 -
- 8.5 -
- 3.1 -
- 4.1 -
- 4.4 -
- 3.5 -
- 2260 -
- 2540 -
- 460 -
- 210 -
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
pF
PH6030L_1
Product data sheet
Rev. 01 — 29 July 2008
© NXP B.V. 2008. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
PH6030L
N-channel TrenchMOS logic level FET
9. Legal information
9.1 Data sheet status
Document status [1][2]
Objective [short] data sheet
Preliminary [short] data sheet
Product [short] data sheet
Product status[3]
Development
Qualification
Production
Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PH6030L_1
Product data sheet
Rev. 01 — 29 July 2008
© NXP B.V. 2008. All rights reserved.
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