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PDF IXTH12N120 Data sheet ( Hoja de datos )
| Número de pieza | IXTH12N120 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Power MOSFET, Avalanche Rated
High Voltage
Preliminary Data Sheet
IXTH 12N120
VDSS = 1200 V
ID (cont) = 12 A
RDS(on)=
1.4 Ω
Symbol Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EEAARS
PD
TJ
TJM
Tstg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TTCC
= 25°C
= 25°C
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1200
1200
V
V
±30 V
±40 V
12 A
48 A
12 A
30 mJ
1.0 J
500 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
6g
300 °C
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
z International standard package
JEDEC TO-247 AD
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Fast switching times
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 250 µA
1200
3
VGS = ±30 VDC, VDS = 0
VVGDSS
=
=
0VDVSS
TTJJ
=
=
25°C
125°C
PVGuSlse=
10 V,
test, t
ID
≤
3=000.5µ•s,IDd25uty
cycle
d
≤
2
%
V
5V
±100 nA
25 µA
3 mA
1.4 Ω
Applications
z Switch-mode and resonant-mode
power supplies
z Motor controls
z Uninterruptible Power Supplies (UPS)
z DC choppers
Advantages
z Easy to mount with 1 screw
(isolated mounting screw hole)
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS98937E(04/04)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTH12N120.PDF ] | |
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