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PDF WPM3407 Data sheet ( Hoja de datos )
| Número de pieza | WPM3407 | |
| Descripción | Single P-Channel Power MOSFET | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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WPM3407
Single P-Channel, -30 V, -4.4A,Power MOSFET
Description
The WPM3407 uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This device is suitable for
use in DC-DC conversion applications. Standard Product
WPM3407 is Pb-free.
Features
V(BR)DSS
−30 V
RDS(on) Typ
36 mΩ @ −10 V
53 mΩ @ −4.5 V
Application
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
ID Max
−4.4A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol 10 S Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 150 °C)a
TA=25°C
TA=70°C
Pulsed Drain Current
Maximum Power
TA=25°C
Dissipation a
TA=70°C
Operating Junction and Storage
Temperature Range
VDS
VGS
ID
IDM
PD
TJ, Tstg
-30
±20
4.4 3.7
3.5 2.9
-20
1.4 1.0
0.9 0.6
-55 to 150
V
A
W
°C
Order information
Part Number
WPM3407-3/TR
Package
SOT23-3
WPM3407
http://www.willsemi.com
3
1
2
SOT 23-3
pin connections :
PïChannel
G1
S2
3D
Top View
Marking:
Drain
3
WP7Z
G
12
Gate Source
W P7= Specific Device Code
Z = Date Code
Shipping
3000Tape&Reel
http://www.willsemi.com
Page 1
12/7/2009 Ver 1.0
1 page  
WPM3407
Power Dissipation Characteristics
1. The package of WPM3407 is SOT23-3, surface mounted on FR4 Board using 1 in sq pad size，
1 oz Cu，R θJA is 125 ℃/W.
2. The power dissipation PD is based on TJ(MAX)=150°C, and the relation between TJ and PD is TJ = Ta + R θJA* PD , the
maximum power dissipation is determined by R θJA .
3. The R θJA is the thermal impedance from junction to ambient, using larger PCB pad size can get smaller R θJA and result in
larger maximum power dissipation.
125 ℃/W when mounted on
a 1 in2 pad of 1 oz copper.
http://www.willsemi.com
Page 5
12/7/2009 Ver 1.0
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WPM3407.PDF ] | |
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