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PDF WPM2014 Data sheet ( Hoja de datos )
| Número de pieza | WPM2014 | |
| Descripción | Single P-Channel Power MOSFET | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WPM2014 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WPM2014
WPM2014
Single P-Channel, -20V, -4.9A, Power MOSFET
Http//:www.sh-willsemi.com
VDS (V)
-20
Rds(on) (Ω)
0.050 @ VGS=–4.5V
0.063 @ VGS=–2.5V
0.074 @ VGS=–1.8V
Descriptions
The WPM2014 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WPM2014 is Pb-free.
Features
DFN2x2-6L
D DS
6 54
D
S
1 23
D DG
Pin configuration (Top view)
6 54
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN2x2-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
WLSI
SYWW
1 23
WLSI = Company code
S = Device code
Y = Year (Last digit)
WW = Week
Marking
Order information
Device
Package
Shipping
WPM2014-6/TR DFN2x2-6L 3000/Reel&Tape
Will Semiconductor Ltd.
1 Oct, 2013-Rev.1.3
1 page  
WPM2014
1750
1500
1250
1000
750
500
250
0
0
V =0V
GS
F=1MHz
Ciss
Coss
Crss
4 8 12 16
-V Drain-to-Source Voltage (V)
DS
20
Capacitance
30
25
20
15
10
5
0
0.001 0.01
0.1
1 10
Time (s)
100 1000
Single pulse power
1.5
1.2
0.9
T=150oC
T=25oC
0.6
0.3
0.3 0.4 0.5 0.6 0.7 0.8 0.9
-V -Source-to-Drain Voltage(V)
SD
Drain-to-Source diode forward voltage
100
Limited by RDS(on)
10
100 μs
1
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1
1 10
VDS - Drain-to-Source Voltage (V)
100
Safe operating power
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
PDM
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 6 2 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 1000
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
5 Oct, 2013-Rev.1.3
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WPM2014.PDF ] | |
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