|
|
Numéro de référence | MDD5N50G | ||
Description | N-Channel MOSFET | ||
Fabricant | MagnaChip | ||
Logo | |||
1 Page
MDD5N50G
N-Channel MOSFET 500V, 4.4 A, 1.4Ω
General Description
The MDD5N50G uses advanced Magnachip’s
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent quality.
MDD5N50G is suitable device for SMPS, HID and
general purpose applications.
Features
VDS = 500V
VDS = 550V
ID = 4.4A
RDS(ON) ≤ 1.4Ω
@ Tjmax
@VGS = 10V
@VGS = 10V
Applications
Power Supply
PFC
Ballast
TO-252
(DPAK)
D
G
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
Dv/dt
EAS
TJ, Tstg
Rating
500
550
±30
4.4
2.8
17.6
70
0.56
4.5
230
-55~150
Unit
V
V
V
A
A
A
W
W/ oC
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
110
1.8
Unit
oC/W
Feb.2010. Version 1.2
1 MagnaChip Semiconductor Ltd.
|
|||
Pages | Pages 6 | ||
Télécharger | [ MDD5N50G ] |
No | Description détaillée | Fabricant |
MDD5N50 | N-Channel MOSFET | MagnaChip |
MDD5N50G | N-Channel MOSFET | MagnaChip |
MDD5N50Z | N-Channel MOSFET | MagnaChip |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |