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ECH8673 fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence ECH8673
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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ECH8673 fiche technique
Ordering number : ENA1892B
ECH8673
Power MOSFET
40V, 3.5A, 85mΩ, –40V –2.5A, 163mΩ, Complementary Dual ECH8
http://onsemi.com
Features
ON-resistance Nch: RDS(on)1=65mΩ(typ.), Pch: ON-resistance RDS(on)1=125mΩ(typ.)
4V drive
Halogen free compliance
Nch+Pch MOSFET
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
PW10μs, duty cycle1%
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
When mounted on ceramic substrate (1200mm2×0.8mm)
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
N-channel P-channel
40 --40
±20 ±20
3.5 --2.5
30 --30
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
85
ECH8673-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TU
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
ECH8
TL
Electrical Connection
87 6 5
Lot No.
1234
Semiconductor Components Industries, LLC, 2013
August, 2013
80713 TKIM TC-00002982/61312 TKIM/D0810PE TKIM TC-00002347 No. A1892-1/8

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