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PDF MMDF5N02Z Data sheet ( Hoja de datos )
| Número de pieza | MMDF5N02Z | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MMDF5N02Z
Power MOSFET
5 Amps, 20 Volts
N−Channel SO−8, Dual
EZFETst are an advanced series of Power MOSFETs which con-
tain monolithic back−to−back zener diodes. These zener diodes pro-
vide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature low RDS(on) and true logic
level performance. They are capable of withstanding high energy in
the avalanche and commutation modes and the drain−to−source diode
has a very low reverse recovery time. EZFET devices are designed for
use in low voltage, high speed switching applications where power ef-
ficiency is important.
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TA = 25°C
Drain Current − Continuous @ TA = 70°C
Drain Current − Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C (Note 1.)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
20
20
± 12
5.0
4.5
40
2.0
− 55
to 150
Thermal Resistance − Junction to Ambient
RθJA
Maximum Temperature for Soldering
TL
1. When mounted on 1 inch square FR−4 or G−10 board
(VGS = 4.5 V, @ 10 Seconds).
62.5
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
°C
°C/W
°C
http://onsemi.com
5 AMPERES
20 VOLTS
RDS(on) = 40 mΩ
N−Channel
D
G
S
MARKING
DIAGRAM
8
SO−8, Dual
CASE 751
STYLE 11
5N02Z
LYWW
1
5N02Z
L
Y
WW
= Device Code
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
Top View
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping
MMDF5N02ZR2
SO−8 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. XXX
1
Publication Order Number:
MMDF5N02Z/D
1 page  
MMDF5N02Z
6
VDS
5
4
Q3
3
Q1
Q2
2
QT
6
5
VGS
4
3
2
1 ID = 5 A 1
TJ = 25°C
00
0 2 4 6 8 10 12 14
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000 VDD = 6 V
ID = 5 A
VGS = 4.5 V
TJ = 25°C
tf
td(off)
tr
100
td(on)
10
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse re-
covery characteristics which play a major role in determin-
ing switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier de-
vice, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 11. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery fur-
ther increases switching losses. Therefore, one would like a
diode with short trr and low QRR specifications to minimize
these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ring-
ing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high
di/dts. The diode’s negative di/dt during ta is directly con-
trolled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode charac-
teristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer re-
verse recovery characteristic. The softness advantage of the
high cell density diode means they can be forced through re-
verse recovery at a higher di/dt than a standard cell MOS-
FET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter re-
covery time and lower switching losses.
5
4.5
VGS = 0 V
TJ = 25°C
4
3.5
3
2.5
2
1.5
1
0.5
0
0
0.1 0.2 0.3
0.4 0.5 0.6 0.7 0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
http://onsemi.com
5
5 Page 
Notes
MMDF5N02Z
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MMDF5N02Z.PDF ] | |
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