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NTMFS4H11NF fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTMFS4H11NF
Description Power MOSFET ( Transistor )
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NTMFS4H11NF fiche technique
NTMFS4H11NF
Power MOSFET
25 V, 334 A, Single N−Channel, SO−8FL
Features
Integrated Schottky Diode
Optimized Design to Minimize Conduction and Switching Losses
Optimized Package to Minimize Parasitic Inductances
Optimized material for improved thermal performance
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
High Performance DC-DC Converters
System Voltage Rails
Netcom, Telecom
Servers
Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
Continuous Drain Current RqJC (Note 1)
Power Dissipation RqJC (Note 1)
Pulsed Drain Current (tp = 10 ms)
Single Pulse Drain-to-Source Avalanche
Energy (Note 1) (IL = 57 Apk, L = 0.3 mH)
Drain to Source dV/dt
VDSS
VGS
ID
PD
ID
PD
IDM
EAS
dV/dt
25 V
±20 V
54 A
3.2 W
334 A
125 W
568 A
487 mJ
7 V/ns
Maximum Junction Temperature
Storage Temperature Range
TJ(max)
TSTG
150
−55 to
150
°C
°C
Lead Temperature Soldering Reflow (SMD TSLD 260 °C
Styles Only), Pb-Free Versions (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C,
VGS = 10 V, IL = 37 A, EAS = 205 mJ.
THERMALCHARACTERISTICS
Parameter
Symbol Max Units
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
RqJA
RqJC
38.9
1.0
4. Thermal Resistance RqJA and RqJC as defined in JESD51−3.
°C/W
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 0
1
http://onsemi.com
VGS
4.5 V
10 V
MAX RDS(on)
1.0 mW
0.7 mW
TYP QGTOT
37.8 nC
82 nC
PIN CONNECTIONS
SO8−FL (5 x 6 mm)
(Top View)
(Bottom View)
N−CHANNEL MOSFET
D (5, 6)
G
(4)
S (1, 2, 3)
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Publication Order Number:
NTMFS4H11NF/D

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