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PDF MJW16010A Data sheet ( Hoja de datos )
| Número de pieza | MJW16010A | |
| Descripción | NPN Silicon Power Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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ON Semiconductort
NPN Silicon Power Transistors
1 kV SWITCHMODEt Series
These transistors are designed for high–voltage, high–speed, power
switching in inductive circuits where fall time is critical. They are
particularly suited for line–operated SWITCHMODE applications.
Typical Applications:
• Switching Regulators
• Inverters
• Solenoids
• Relay Drivers
• Motor Controls
• Deflection Circuits
Features:
• Collector–Emitter Voltage — VCEV = 1000 Vdc
• Fast Turn–Off Times
• 50 ns Inductive Fall Time — 100_C (Typ)
• 90 ns Inductive Crossover Time — 100_C (Typ)
• 900 ns Inductive Storage Time — 100_C (Typ)
• 100_C Performance Specified for:
Reverse–Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
• Extended FBSOA Rating Using Ultra–fast Rectifiers
• Extremely High RBSOA Capability
MJW16010A*
*ON Semiconductor Preferred Device
POWER TRANSISTORS
15 AMPERES
500 VOLTS
125 AND 175 WATTS
CASE 340K–01
TO–247AE
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 6
1
Publication Order Number:
MJW16010A/D
1 page  
MJW16010A
TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS
IC/IB1 = 5, TC = 75°C, VCE(pk) = 400 V
5000
3000
VBE(off) = 0 V
2000 2 V
1000 5 V
500
300
200
100
0.07
0.05
1.5
2
3
5 7 10
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Storage Time
IC/IB1 = 10, TC = 75°C, VCE(pk) = 400 V
5000
3000
2000
VBE(off) = 0 V
1000 2 V
700
500 5 V
300
200
100
0.05
15 1.5 2
3
5 7 10
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Storage Time
15
1000
500 VBE(off) = 0 V
300
200
5V
100
50 2 V
20
10
1.5 2
3
5 7 10
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Collector Current Fall Time
1000
500 VBE(off) = 0 V
300
200
100 2 V
50
5V
20
10
15 1.5 2
3
5 7 10
15
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Collector Current Fall Time
1500
1000
VBE(off) = 0 V
500
300
200 5 V
100 2 V
50
20
15
1.5 2
3
5 7 10
IC, COLLECTOR CURRENT (AMPS)
1500
1000
500 VBE(off) = 0 V
300
200
100
2V
50
5V
20
15
15 1.5 2
3
5 7 10
IC, COLLECTOR CURRENT (AMPS)
http://onsemi.com
5
15
5 Page 
MJW16010A
PACKAGE DIMENSIONS
TO–247
CASE 340K–01
ISSUE C
–Q–
0.25 (0.010) M T B M
–B–
U
A
1 23
P
K
L
R
–Y–
F
D
0.25 (0.010) M Y Q S
V
G
E
C
–T–
4
H
J
NOTES:
ąă1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
ąă2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 19.7 20.3 0.776 0.799
B 15.3 15.9 0.602 0.626
C 4.7 5.3 0.185 0.209
D 1.0 1.4 0.039 0.055
E 1.27 REF
0.050 REF
F 2.0 2.4 0.079 0.094
G 5.5 BSC
0.216 BSC
H 2.2 2.6 0.087 0.102
J 0.4 0.8 0.016 0.031
K 14.2 14.8 0.559 0.583
L 5.5 NOM
0.217 NOM
P 3.7 4.3 0.146 0.169
Q 3.55 3.65 0.140 0.144
R 5.0 NOM
0.197 NOM
U 5.5 BSC
0.217 BSC
V 3.0 3.4 0.118 0.134
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MJW16010A.PDF ] | |
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