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NCE15P25 fiches techniques PDF

NCE Power Semiconductor - P-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE15P25
Description P-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE15P25 fiche technique
http://www.ncepower.com
Pb Free Product
NCE15P25
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE15P25 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in a wide variety of applications.
General Features
VDS =-150V,ID =-25A
RDS(ON) <140m@ VGS=-10V
Super high dense cell design
Advanced trench process technology
Reliable and rugged
High density cell design for ultra low On-Resistance
Schematic diagram
Application
Portable equipment and battery powered systems
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE15P25
NCE15P25
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-150
±20
-25
-17
-100
120
0.8
-55 To 175
Unit
V
V
A
A
A
W
W/
Wuxi NCE Power Semiconductor Co., Ltd
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