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FW344A fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence FW344A
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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FW344A fiche technique
Ordering number : EN8998C
FW344A
Power MOSFET
30V, 4.5A, 64mΩ, –30V, –3.5A, 102mΩ, Complementary Dual SOIC8
http://onsemi.com
Features
ON-resistance Nch : RDS(on)1=49mΩ(typ.)
Pch : RDS(on)1=78mΩ(typ.)
4V drive
Halogen free compliance
Nch+Pch MOSFET
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10μs)
Drain Current (PW10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
IDP
PD
PT
Tch
Duty cycle1%
Duty cycle1%
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit
When mounted on ceramic substrate (2000mm2×0.8mm)
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
N-channel P-channel
30 --30
±20 ±20
4.5 --3.5
5 --4
18 --14
1.4
1.7
150
--55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7072-001
4.9
85
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
FW344A-TL-2W
0.22
Packing Type : TL
Marking
1
1.27
4
0.445 0.254 (GAGE PLANE)
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SOIC8
TL
Electrical Connection
8765
FW344
A LOT No.
Semiconductor Components Industries, LLC, 2013
July, 2013
1234
91212 TKIM/62712 TKIM/31412 TKIM/22212PA TKIM TC-00002693 No.8998-1/9

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