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MTP6N60E fiches techniques PDF

ON Semiconductor - Power Field Effect Transistor

Numéro de référence MTP6N60E
Description Power Field Effect Transistor
Fabricant ON Semiconductor 
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MTP6N60E fiche technique
MTP6N60E
Power Field Effect
Transistor
NChannel EnhancementMode Silicon
Gate
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition, this advanced MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a draintosource
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
http://onsemi.com
TMOS POWER FET
6.0 AMPERES, 600 VOLTS
RDS(on) = 1.2 W
TO220AB
CASE 221A09
Style 5
D
G
S
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 7
1
Publication Order Number:
MTP6N60E/D

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