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IXYS - 350V N-Channel Depletion-Mode FET

Numéro de référence CPC3714
Description 350V N-Channel Depletion-Mode FET
Fabricant IXYS 
Logo IXYS 





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CPC3714 fiche technique
INTEGRATED CIRCUITS DIVISION
V(BR)DSX /
V(BR)DGX
350VP
RDS(on)
(max)
14
IDSS (min)
240mA
Package
SOT-89
Features
Offers Low RDS(on) at Cold Temperatures
RDS(on) 14max. at 25ºC
High Input Impedance
High Breakdown Voltage: 350V
Low VGS(off) Voltage: -1.6 to -3.9V
Small Package Size: SOT-89
Applications
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Telecommunications
Power Supply
Package Pinout
G
D
S
D
(SOT-89)
CPC3714
350V N-Channel
Depletion-Mode FET
Description
The CPC3714 is an N-channel, depletion-mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high input
impedance, for use in high power applications. The
CPC3714 is a highly reliable FET device that has
been used extensively in our solid state relays for
industrial and telecommunications applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3714 offers a low, 14maximum, on-state
resistance at 25ºC.
The CPC3714 has a minimum breakdown voltage of
350VP and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3714CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Circuit Symbol
G
D
S
DS-CPC3714-R02
www.ixysic.com
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