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Alpha & Omega Semiconductors - 30V N-Channel MOSFET

Numéro de référence AOL1206
Description 30V N-Channel MOSFET
Fabricant Alpha & Omega Semiconductors 
Logo Alpha & Omega Semiconductors 





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AOL1206 fiche technique
AOL1206
30V N-Channel MOSFET
General Description
Product Summary
The AOL1206 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of RDS(ON)
and Crss.In addition,switching behavior is well controlled
with a "Schottky style" soft recovery body diode.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
30V
54A
< 6m:
< 8.5m:
UltraSO-8TM
Top View
Bottom View
D
G
S
S
G
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
54
42
250
16
13
30
45
62
31
2.7
1.7
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ” 10s
Steady-State
Steady-State
Symbol
RTJA
RTJC
Typ
16
38
2
Max
20
46
2.4
Rev0 : Feb 2010
www.aosmd.com
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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