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PDF RP1E100XN Data sheet ( Hoja de datos )
| Número de pieza | RP1E100XN | |
| Descripción | 4V Drive Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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4V Drive Nch MOSFET
RP1E100XN
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
Dimensions (Unit : mm)
MPT6
(Single)
(6) (5) (4)
(1) (2) (3)
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RP1E100XN
Taping
TR
1000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
30
20
10
36
1.6
36
2.0
150
Range of storage temperature
Tstg 55 to +150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(6) (5)
(4)
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗2
∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol Limits
Rth (ch-a)* 62.5
Unit
C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.09 - Rev.A
1 page  
RP1E100XN
Measurement circuits
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.1-1 Switching time measurement circuit
VGS
IG(Const.)
ID
RL
VDS
D.U.T.
VDD
Fig.2-1 Gate charge measurement circuit
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.09- Rev.A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RP1E100XN.PDF ] | |
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