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PDF TPCM8004-H Data sheet ( Hoja de datos )
| Número de pieza | TPCM8004-H | |
| Descripción | Silicon N-Channel MOS Type Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TPCM8004-H (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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TPCM8004-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H)
TPCM8004-H
High-Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
0.8
8
0.25±0.05
0.05 M A
5
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 5.0 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 7.3 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 60 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
0.2＋－00.2
14
3.5±0.2
0.55
A
0.05 S
S1
4
Absolute Maximum Ratings (Ta = 25°C)
2.75±0.2
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
30
30
±20
24
72
30
2.3
1.0
75
24
3.0
150
−55 to 150
Unit
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
0.8±0.1
85
1, 2, 3: SOURCE
5, 6, 7, 8: DRAIN
4: GATE
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-4L1A
Weight: 0.028 g (typ.)
Circuit Configuration
8765
1234
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-02-23
1 page  
RDS (ON) – Ta
20
Common source
Pulse test
15
ID = 6, 12, 24 A
10 VGS = 4.5 V
5 VGS = 10 V
ID = 6, 12, 24 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCM8004-H
IDR – VDS
100
10
4.5
3
10
1
VGS = 0 V
1
Common source
Ta = 25°C
Pulse test
0.1
−0
−0.2
−0.4 −0.6
−0.8
−1
−1.2
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Coss
100 Crss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
10
Drain-source voltage VDS (V)
100
Vth – Ta
3
2.5
2
1.5
1
Common source
0.5 VDS = 10 V
ID = 1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
Dynamic input/output
characteristics
50
Common source
ID = 24 A
40 Ta = 25°C
Pulse test
30
VDS = 24 V
20
12
10
6
VGS
6
12
VDD = 24 V
0
0 5 10 15 20 25
Total gate charge Qg (nC)
20
16
12
8
4
0
30
5
2009-02-23
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCM8004-H.PDF ] | |
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