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IRL3714ZS fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRL3714ZS
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRL3714ZS fiche technique
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 94798
IRL3714Z
IRL3714ZS
IRL3714ZL
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V 16m: 4.8nC
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3714Z
D2Pak
IRL3714ZS
TO-262
IRL3714ZL
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
eCase-to-Sink, Flat Greased Surface
Junction-to-Ambient
hJunction-to-Ambient (PCB Mount)
Notes  through † are on page 12
www.irf.com
Max.
20
± 20
36g
25g
140
35
18
0.23
-55 to + 175
300 (1.6mm from case)
Typ.
–––
0.50
–––
–––
Max.
4.3
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
10/8/03

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