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IRFSL23N15DPbF fiches techniques PDF

International Rectifier - SMPS MOSFET

Numéro de référence IRFSL23N15DPbF
Description SMPS MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFSL23N15DPbF fiche technique
PD - 95535
SMPS MOSFET
IRFB23N15DPbF
IRFS23N15DPbF
IRFSL23N15DPbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
150V
RDS(on) max
0.090
ID
23A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB23N15D
D2Pak
TO-262
IRFS23N15D IRFSL23N15D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
23
17
92
3.8
136
0.9
± 30
4.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies
l Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Units
A
W
W/°C
V
V/ns
°C
Notes  through ‡ are on page 11
www.irf.com
1
7/20/04

PagesPages 11
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