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PDF FDC796N Data sheet ( Hoja de datos )
| Número de pieza | FDC796N | |
| Descripción | 30V N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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February 2004
FDC796N
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• 12.5 A, 30 V.
RDS(ON) = 9 mΩ @ VGS = 10 V
RDS(ON) = 12 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge
• High power and current handling capability
• Fast switching speed.
G
S
S
SuperSOT-6TM FLMP
S
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.796
FDC796N
7’’
Bottom Drain
1
2
3
Ratings
30
± 20
12.5
40
2
1.1
−55 to +150
60
111
0.5
Tape width
8mm
6
5
4
Units
V
A
W
°C
°C/W
Quantity
3000 units
2004 Fairchild Semiconductor Corporation
FDC796N Rev D (W)
1 page  
Dimensional Outline and Pad Layout
FDC796N Rev D (W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDC796N.PDF ] | |
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