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FDJ128N fiches techniques PDF

Fairchild Semiconductor - N-Channel 2.5 Vgs Specified PowerTrench MOSFET

Numéro de référence FDJ128N
Description N-Channel 2.5 Vgs Specified PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDJ128N fiche technique
August 2004
FDJ128N
N-Channel 2.5 Vgs Specified PowerTrenchMOSFET
General Description
This N-Channel -2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Battery management
Features
5.5 A, 20 V.
RDS(ON) = 35 m@ VGS = 4.5 V
RDS(ON) = 51 m@ VGS = 2.5 V
Low gate charge
High performance trench technology for extremely
low RDS(ON)
Compact industry standard SC75-6 surface mount
package
G
S
S
SSS
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.B
FDJ128N
7’’
Ratings
20
± 12
5.5
16
1.6
55 to +150
77
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2004 Fairchild Semiconductor Corporation
FDJ128N Rev B2 W)

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