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IRF7324D1PbF fiches techniques PDF

International Rectifier - FETKY MOSFET / Schottky Diode

Numéro de référence IRF7324D1PbF
Description FETKY MOSFET / Schottky Diode
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7324D1PbF fiche technique
PD-95309A
IRF7324D1PbF
FETKYä MOSFET / Schottky Diode
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal for Mobile Phone Applications
l Generation V Technology
l SO-8 Footprint
l Lead-Free
A1
A2
S3
G4
8K
7K
6D
5D
Description
Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques
to achieve extremely low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward drop Schottky rectifiers
results in an extremely efficient device suitable for use in a wide variety of
portable electronics applications.
VDSS = -20V
RDS(on) = 0.27
Schottky Vf = 0.39V
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
dV/dt
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
dPeak Diode Recovery
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
-20
± 12
-2.2
-1.8
-22
2.0
1.3
-0.74
16
-55 to + 150
Units
V
A
W
V/ns
mW/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes  through … are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
12/06/04

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