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Numéro de référence | IRF7324D1PbF | ||
Description | FETKY MOSFET / Schottky Diode | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
PD-95309A
IRF7324D1PbF
FETKYä MOSFET / Schottky Diode
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal for Mobile Phone Applications
l Generation V Technology
l SO-8 Footprint
l Lead-Free
A1
A2
S3
G4
8K
7K
6D
5D
Description
Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques
to achieve extremely low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward drop Schottky rectifiers
results in an extremely efficient device suitable for use in a wide variety of
portable electronics applications.
VDSS = -20V
RDS(on) = 0.27Ω
Schottky Vf = 0.39V
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
dV/dt
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
dPeak Diode Recovery
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
-20
± 12
-2.2
-1.8
-22
2.0
1.3
-0.74
16
-55 to + 150
Units
V
A
W
V/ns
mW/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes through
are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
12/06/04
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Pages | Pages 8 | ||
Télécharger | [ IRF7324D1PbF ] |
No | Description détaillée | Fabricant |
IRF7324D1PbF | FETKY MOSFET / Schottky Diode | International Rectifier |
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