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HUFA76504DK8 fiches techniques PDF

Fairchild Semiconductor - Logic Level UltraFET Power MOSFET

Numéro de référence HUFA76504DK8
Description Logic Level UltraFET Power MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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HUFA76504DK8 fiche technique
Data Sheet
HUFA76504DK8
June 2001
[ /Title
(HUF7
6400S
K8)
/Sub-
ject
(60V,
0.072
Ohm,
4A, N-
Chan-
nel,
Logic
Level
UltraFE
2.3A, 80V, 0.222 Ohm, Dual N-Channel,
Logic Level UltraFET Power MOSFET
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
Symbol
SOURCE1 (1)
GATE1 (2)
DRAIN 1 (8)
DRAIN 1 (7)
Power
MOS-
FET)
/Author
SOURCE2 (3)
GATE2 (4)
DRAIN 2 (6)
DRAIN 2 (5)
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.200Ω, VGS = 10V
- rDS(ON) = 0.222Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE™ and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.Fairchildsemi.com
• Internal RG = 50
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Transient Thermal Impedance Curve vs Board Mounting
Area
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA76504DK8
MS-012AA
76504DK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76504DK8T.
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Chan-
nel,
Logic
Level
UltraFE
Power
MOS-
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
HUFA76504DK8
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
Continuous
Continuous
(TA=
(TA=
(TA=
(TA=
1122005500ooCCooCC,, ,,VVVVGGGGSSSS====15450V.VV)5))(VN(()NFo(itogFetuieg2rue)3r)2e. )..2(..)N..(oN.. t..oe..te2.. )..3...)
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ID
ID
ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
80
80
±16
2.3
2.5
1.1
1.1
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation (Note 2)
Derate Above 25oC . . . .
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 125oC.
2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 1 second.
3. 228oC/W measured using FR-4 board with 0.006 in2 (3.87 mm2) copper pad at 1000 seconds.
2.5
20
-55 to 150
300
260
W
mW/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.mtp.intersil.com/automotive.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
Rev. A, June 4, 2001
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET® is a registered trademark of Fairchild Corporation. PSPICE® is a registered trademark of Cadence Corporation.
SABER© is a registered trademark of Avanti corporation.

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