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PDF FDC6432SH Data sheet ( Hoja de datos )
| Número de pieza | FDC6432SH | |
| Descripción | 12V P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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April 2003
FDC6432SH
12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET
General Description
Features
This complementary P-Channel MOSFET with
SyncFET has been designed specifically to improve the
overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM
controllers. It has been optimized for providing an
extremely low RDS(ON) in a small package.
Applications
DC/DC converter
Power management
• SyncFET
2.4 A, 30V
RDS(ON) = 90 mΩ @ VGS = 10 V
RDS(ON) = 105 mΩ @ VGS = 4.5 V
• P channel
–2.5 A, –12V
R
RDS(ON) = 90 mΩ @ VGS = –4.5 V
RDS(ON) = 125 mΩ @ VGS = –2.5 V
RDS(ON) = 220 mΩ @ VGS = –1.8 V
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON)
D2
S1
D1
SuperSOT TM-6
Pin 1
G2
S2
G1
SuperSOT™-6
D1,2 4
S1 5
D1,2 6
Q2(P)
3
G2
2 S2
1
Q1(N)
G1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current– Continuous
(Note 1a)
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.432
FDC6432SH
7’’
Ratings
Q1 (N)
30
Q2 (P)
–12
±16 ±8
2.4 –2.5
7 –7
1.3
0.7
–55 to +150
Units
V
V
A
W
°C
100 °C/W
175
60
Tape width
8mm
Quantity
3000 units
2003 Fairchild Semiconductor Corp.
FDC6432SH Rev B (W)
1 page  
Typical Characteristics : Q1
10
ID = 2.4A
8
6
4
2
0
01
VDS = 10V
20V
23
Qg, GATE CHARGE (nC)
4
15V
5
Figure 7. Gate Charge Characteristics.
100
10 RDS(ON) LIMIT
1
VGS = 10V
0.1 SINGLE PULSE
RθJA = 175oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
400
f = 1 MHz
Ciss VGS = 0 V
300
200
100
Crss
Coss
0
0 5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
10
8
6
4
2
0
0.01
0.1
SINGLE PULSE
RθJA = 175°C/W
TA = 25°C
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.0001
SINGLE PULSE
0.001
0.01
0.1
t1, TIME (sec)
1
RθJA(t) = r(t) * RθJA
RθJA = 175oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC6432SH Rev B (W)
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDC6432SH.PDF ] | |
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