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PDF SSF2160G4 Data sheet ( Hoja de datos )
| Número de pieza | SSF2160G4 | |
| Descripción | 20V N-Channel MOSFET | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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Main Product Characteristics
VDSS
20V
RDS(on) 28mohm(typ.)
ID 4.5A
SOT23-3
Features and Benefits
Advanced trench MOSFET process technology
Special designed for buttery protection, load
switching and general power management
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
SSF2160G4
20V N-Channel MOSFET
21S6205G4
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buttery protection, power switching application and a wide variety of other
applications.
Absolute Max Rating
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
20
±10
4.5
18
1.1
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
110 ℃/W
www.godark.com
Page 1 of 8
Rev.1.0
1 page  
SSF2160G4
20V N-Channel MOSFET
TJ-Junction Temperature(℃)
Figure 7: Power Dissipation
TJ-Junction Temperature(℃)
Figure 8： Drain Current
Figure 9: Safe Operation Area
www.godark.com
Page 5 of 8
Rev.1.0
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSF2160G4.PDF ] | |
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